Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special class of interface-based memristors. Here, we adapt the widely-used Yakopcic compact model by including transport equations relevant to interface-type memristors. This model is able to reproduce the qualitative behaviour measured upon Nb-doped SrTiO$_3$ memristive devices. Our analysis demonstrates a direct correlation between the devices' characteristic parameters and those of our model. The model can clearly identify the charge transport mechanism in different resistive states thus facilitating evaluation of the relevant parameters pertaining to resistive switching in interface-based memristors. One clear application of our study is its ability to inform the design and fabrication of related memristive devices.

适用于基于接口的记忆电阻器的Yakopcic紧凑模型包括相关输运方程，能够重现Nb掺杂SrTiO3记忆元件上测量到的行为，为评估相关参数提供帮助，并可推进相关记忆电阻器的设计和制造。

一种连接物理和器件属性的界面型忆阻器紧凑型模型