Accommodating all the weights on-chip for large-scale NNs remains a great
challenge for SRAM based computing-in-memory (SRAM-CIM) with limited on-chip
capacity. Previous non-volatile SRAM-CIM (nvSRAM-CIM) addresses this issue by
integrating high-density single-level ReRAMs on the top of high-efficiency
SRAM-CIM for weight storage to eliminate the off-chip memory access. However,
previous SL-nvSRAM-CIM suffers from poor scalability for an increased number of
SL-ReRAMs and limited computing efficiency. To overcome these challenges, this
work proposes an ultra-high-density three-level ReRAMs-assisted
computing-in-nonvolatile-SRAM (TL-nvSRAM-CIM) scheme for large NN models. The
clustered n-selector-n-ReRAM (cluster-nSnRs) is employed for reliable
weight-restore with eliminated DC power. Furthermore, a ternary SRAM-CIM
mechanism with differential computing scheme is proposed for energy-efficient
ternary MAC operations while preserving high NN accuracy. The proposed
TL-nvSRAM-CIM achieves 7.8x higher storage density, compared with the
state-of-art works. Moreover, TL-nvSRAM-CIM shows up to 2.9x and 1.9x enhanced
energy-efficiency, respectively, compared to the baseline designs of SRAM-CIM
and ReRAM-CIM, respectively.

为了解决 SRAM-CIM 的内存容量有限的问题，本研究提出了一种 TL-nvSRAM-CIM 方案，通过使用超高密度的三级 ReRAMs 辅助计算，在可靠的权重恢复以及高能效三元 MAC 运算的基础上实现了更高的存储密度和能效。